Article
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions
2009 International Workshop on Junction Technology
(2009)
Abstract
In this work, studies carried out with several techniques on As junctions activated by solid phase epitaxial regrowth (SPER), rapid thermal process (RTP) spike annealing and laser sub-melt annealing (LA) are summarized. In particular, the sheet resistance (Rs) values and Hall effect measured active carrier doses are interpreted after investigation by secondary ion mass spectrometry (SIMS) and extended x-ray absorption fine structure (EXAFS).
Keywords
- Epitaxial growth,
- Solid lasers,
- Rapid thermal annealing,
- Rapid thermal processing,
- X-ray lasers,
- Hall effect,
- Electrical resistance measurement,
- Particle measurements,
- Mass spectroscopy,
- Electromagnetic wave absorption
Disciplines
Publication Date
June 11, 2009
DOI
10.1109/IWJT.2009.5166221
Citation Information
M. Bersani, G. Pepponi, D. Giubertoni, S. Sahiner, et al.. "Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions" 2009 International Workshop on Junction Technology (2009) p. 64 - 68 Available at: http://works.bepress.com/stephen_kelty/2/