"Modeling of Diffusion and Ion Implantation in HgCdTe: A Comparison to Transient Enhanced Diffusion in Si" by Stacy H. Gleixner

Selected Works of Stacy H. Gleixner

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Modeling of Diffusion and Ion Implantation in HgCdTe: A Comparison to Transient Enhanced Diffusion in Si

Process Physics and Modeling in Semiconductor Technology (1996)

Stacy H. Gleixner, San Jose State University
H. G. Robinson
B. L. Williams
C. R. Helms

Disciplines

Other Chemical Engineering and
Other Materials Science and Engineering

Publication Date

1996

Citation Information

Stacy H. Gleixner, H. G. Robinson, B. L. Williams and C. R. Helms. "Modeling of Diffusion and Ion Implantation in HgCdTe: A Comparison to Transient Enhanced Diffusion in Si" Process Physics and Modeling in Semiconductor Technology (1996)
Available at: http://works.bepress.com/stacy_gleixner/28/