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Selected Works of Stacy H. Gleixner
Article
Derivation of an Analytical Model to Calculate Junction Depth in HgCdTe Photodiodes
Journal of Applied Physics (1998)
  • Stacy H. Gleixner, San Jose State University
  • H. G. Robinson
  • C. R. Helms, Stanford University
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Abstract

Presents an enhanced analytical model to calculate junction depth and Hg interstitial profile during n-on-p junction formation in HgCdTe photodiodes. Detailed information on the enhanced model; Function of the model; Information on HgCdTe; Detailed information on how the model was obtained.

Disciplines
Publication Date
February 1, 1998
Publisher Statement
Copyright © 1998 AIP Publishing LLC. The published article may be found at:http://dx.doi.org/10.1063/1.366829.
Citation Information
Stacy H. Gleixner, H. G. Robinson and C. R. Helms. "Derivation of an Analytical Model to Calculate Junction Depth in HgCdTe Photodiodes" Journal of Applied Physics Vol. 83 Iss. 3 (1998)
Available at: http://works.bepress.com/stacy_gleixner/25/