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Article
Universality of non-Ohmic shunt leakage in thin-film solar cells
Other Nanotechnology Publications
  • Sourabh Dongaonkar, Purdue University - Main Campus
  • J. D. Servaites, Northwestern University
  • G. M. Ford, Purdue University
  • S. Loser, Northwestern University
  • R. M. Gelfand, Northwestern University
  • H. Mohseni, Northwestern University
  • Hugh Hillhouse, Purdue University
  • R. Agrawal, Purdue University
  • M. A. Ratner, Northwestern University
  • T. J. Marks, Northwestern University
  • Mark S. Lundstrom, School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University
  • Muhammad A. Alam, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University
Abstract

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In, Ga)Se-2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V < similar to 0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (I-sh), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V = 0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518509]

Keywords
  • HYDROGENATED AMORPHOUS-SILICON; CURRENT TRANSPORT; PIN DIODES; ALUMINUM; SPACE; DEPENDENCE; CONDUCTION; EFFICIENCY; CURRENTS; SOLIDS
Date of this Version
12-15-2010
Citation Information
Sourabh Dongaonkar, J. D. Servaites, G. M. Ford, S. Loser, et al.. "Universality of non-Ohmic shunt leakage in thin-film solar cells" (2010)
Available at: http://works.bepress.com/sourabh_dongaonkar/9/