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100nm Thick Aluminum Nitride Based Piezoelectric Nano Switches Exhibiting 1mV Threshold Voltage Via Body-Biasing
Proceedings of 2010 Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head 2010) (2010)
  • Nipun Sinha, University of Pennsylvania
  • Zhijun Guo, University of Pennsylvania
  • Valeriy Felmetsger
  • Gianluca Piazza, University of Pennsylvania
Abstract

This paper reports on the first demonstration of aluminum nitride (AlN) piezoelectric logic switches that were fabricated with ultra-thin (100nm) AlN films and exhibit a 1 mV threshold voltage via the body-biasing scheme. The application of a relatively low (< 6 V) fixed potential to the body terminal of a 4-terminal switch has resulted in a repeatable threshold voltage of 1 mV. The nano-switch has been cycled to > 109 cycles and, although the contact resistance was found to be high (~ 1 MΩ), the nano-films have functioned throughout to show high piezoelectric nano-film reliability.

Publication Date
2010
Citation Information
Nipun Sinha, Zhijun Guo, Valeriy Felmetsger and Gianluca Piazza. "100nm Thick Aluminum Nitride Based Piezoelectric Nano Switches Exhibiting 1mV Threshold Voltage Via Body-Biasing" Proceedings of 2010 Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head 2010) (2010)
Available at: http://works.bepress.com/sinha/12/