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DEMONSTRATION OF LOW VOLTAGE AND FUNCTIONALLY COMPLETE LOGIC OPERATIONS USING BODY-BIASED COMPLEMENTARY AND ULTRA-THIN ALN PIEZOELECTRIC MECHANICAL SWITCHES
Proceedings of 2010 MicroElectroMEchanical Systems Conference (MEMS 2010) (2010)
  • Nipun Sinha, University of Pennsylvania
  • Timothy S. Jones, University of Pennsylvania
  • Zhijun Guo, University of Pennsylvania
  • Gianluca Piazza, University of Pennsylvania
Abstract

This paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias voltage < 8 V.

Publication Date
2010
Citation Information
Nipun Sinha, Timothy S. Jones, Zhijun Guo and Gianluca Piazza. "DEMONSTRATION OF LOW VOLTAGE AND FUNCTIONALLY COMPLETE LOGIC OPERATIONS USING BODY-BIASED COMPLEMENTARY AND ULTRA-THIN ALN PIEZOELECTRIC MECHANICAL SWITCHES" Proceedings of 2010 MicroElectroMEchanical Systems Conference (MEMS 2010) (2010)
Available at: http://works.bepress.com/sinha/11/