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Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches
Proceedings of 2009 IEEE International Electron Devices Meeting (IEDM 2009) (2009)
  • Nipun Sinha, University of Pennsylvania
  • Timothy S. Jones, University of Pennsylvania
  • Zhijun Guo, University of Pennsylvania
  • Gianluca Piazza, University of Pennsylvania
Abstract

This paper reports on the first implementation of low voltage complementary logic (< 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a ± 1.5 V voltage swing.

Publication Date
2009
Citation Information
Nipun Sinha, Timothy S. Jones, Zhijun Guo and Gianluca Piazza. "Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches" Proceedings of 2009 IEEE International Electron Devices Meeting (IEDM 2009) (2009)
Available at: http://works.bepress.com/sinha/10/