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Article
Analyses of Electroluminescence Spectra of Silicon Junctions in Avalanche Breakdown Using an Indirect Interband Recombination Model
2000
  • David V. Kerns, Franklin W. Olin College of Engineering
  • Sherra E. Kerns, Franklin W. Olin College of Engineering
  • M Lahbabi
  • A Ahaitouf
  • E Abarkan
  • M Fliyou
  • A Hoffmann
  • J P Charles
  • Bharat L Bhuva
Document Type
Article
Publication Date
1-1-2000
Abstract
Light emission from a p-n junction biased in avalanche breakdown has been modeled over the range 1.4–3.4 eV. The model emphasizes indirect interband processes and Si self-absorption. Comparisons between measured and simulated spectra for sample junctions from multiple devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device characteristics.
Comments

© 2000 American Institute of Physics. This article was published in Applied Physics Letters, vol. 77, iss. 20, p. 3182-3184 and may be found here.

Citation Information
David V. Kerns, Sherra E. Kerns, M Lahbabi, A Ahaitouf, et al.. "Analyses of Electroluminescence Spectra of Silicon Junctions in Avalanche Breakdown Using an Indirect Interband Recombination Model" (2000)
Available at: http://works.bepress.com/sherra_kerns/6/