Analyses of Electroluminescence Spectra of Silicon Junctions in Avalanche Breakdown Using an Indirect Interband Recombination Model2000
AbstractLight emission from a p-n junction biased in avalanche breakdown has been modeled over the range 1.4–3.4 eV. The model emphasizes indirect interband processes and Si self-absorption. Comparisons between measured and simulated spectra for sample junctions from multiple devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device characteristics.
Citation InformationDavid V. Kerns, Sherra E. Kerns, M Lahbabi, A Ahaitouf, et al.. "Analyses of Electroluminescence Spectra of Silicon Junctions in Avalanche Breakdown Using an Indirect Interband Recombination Model" (2000)
Available at: http://works.bepress.com/sherra_kerns/6/