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Article
Simulation of Gallium Arsenide Electroluminescence Spectra in Avalanche Breakdown Using Self-Absorption and Recombination Models
2002
  • David V. Kerns, Franklin W. Olin College of Engineering
  • Sherra E. Kerns, Franklin W. Olin College of Engineering
  • M Lahbabi
  • A Ahaitouf
  • E Abarkan
  • M Fliyou
  • A Hoffmann
  • J P Charles
  • Bharat L Bhuva
Document Type
Article
Publication Date
1-1-2002
Abstract
Light emission from gallium arsenide (GaAs) p–n junctions biased in avalanche breakdown have been modeled over the range of 1.4–3.4 eV. The model emphasizes direct and indirect recombination processes and bulk self-absorption. Comparisons between measured and simulated spectra for sample junctions from custom and commercially fabricated GaAs devices demonstrate that the model is simple, accurate, and consistent with fundamental physical device theory. The model also predicts the junction depth with accuracy.
Comments

© 2002 American Institute of Physics. This article was published in Applied Physics Letters, vol. 80, iss. 6, p. 1004-1006 and may be found here.

Citation Information
David V. Kerns, Sherra E. Kerns, M Lahbabi, A Ahaitouf, et al.. "Simulation of Gallium Arsenide Electroluminescence Spectra in Avalanche Breakdown Using Self-Absorption and Recombination Models" (2002)
Available at: http://works.bepress.com/sherra_kerns/4/