Skip to main content
Article
Electron-Stimulated Oxidation of Silicon Carbide
Surface Science
  • Gavin McDaniel
  • S. T. Fenstermaker
  • D. E. Walker
  • Sharmila M. Mukhopadhyay, Wright State University - Main Campus
  • W. V. Lampert
  • P. H. Holloway
Document Type
Article
Publication Date
1-20-2000
Abstract

Auger Electron spectroscopy was used to study electron-stimulated oxidation (ESO) of SIG. The rate of oxidation was investigated as a function of electron-beam exposure (on and off), primary electron-beam energy (3-6 keV), electron-beam current (25-500 nA) and total chamber pressure. The oxidation rate correlated with overall chamber pressure rather than the partial pressure of H2O, CO or CO2 alone. The rate decreased as the primary-beam voltage E-p was increased. The oxidation rate increased as the primary-beam current was increased at higher pressures (2.2 x 10(-7) Torr). Oxidation did not occur in the absence of the electron beam. (C) 2000 Elsevier Science B.V. All rights reserved.

DOI
10.1016/S0039-6028(99)01028-6
Citation Information
Gavin McDaniel, S. T. Fenstermaker, D. E. Walker, Sharmila M. Mukhopadhyay, et al.. "Electron-Stimulated Oxidation of Silicon Carbide" Surface Science Vol. 445 Iss. 2-3 (2000) p. 159 - 166 ISSN: 0039-6028
Available at: http://works.bepress.com/sharmila_mukhopadhyay/40/