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MTJ variation monitor-assisted adaptive MRAM write
the 53rd Annual Design Automation Conference (DAC '16) (2016)
  • Shaodi Wang, University of California, Los Angeles
  • Hochul Lee
  • Cecile Grezes
  • Pedram Khalili
  • Kang L. Wang
  • Puneet Gupta
Spin-transfer torque random access memory (STT-RAM) and magnetoelectric random access memory (MeRAM) are promising non-volatile memory technologies. But STT-RAM and Me RAM both suffer from high write error rate due to thermal fluctuation of magnetization. Temperature and wafer-level process variation significantly exacerbate these problems. In this paper, we propose a design that adaptively selects optimized write pulse for STT-RAM and MeRAM to overcome ambient process and temperature variation. To enable the adaptive write, we design specific MTJ-based variation monitor, which precisely senses process and temperature variation. The monitor is over 10X faster, 5X more energy-efficient, and 20X smaller compared with conventional thermal monitors of similar accuracy. With adaptive write, the write latency of STT-RAM and MeRAM cache are reduced by up to 17% and 59% respectively, and application run time is improved by up to 41%.
Publication Date
Spring June 9, 2016
Austin, TX, U.S.A
Citation Information
Shaodi Wang, Hochul Lee, Cecile Grezes, Pedram Khalili, et al.. "MTJ variation monitor-assisted adaptive MRAM write" the 53rd Annual Design Automation Conference (DAC '16) (2016)
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