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Presentation
A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance
Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of (2011)
  • Shaodi Wang, University of California, Los Angeles
  • Lining Zhang
  • Jin He
Abstract
This paper developed a full three-dimensional (3-D) statistical simulation approach to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic parameter fluctuations at fixed LER parameters are studied in carefully designed simulation experiments. The result shows that Fin-width LER causes a dramatic shift and fluctuations in threshold voltage. The simulation results also imply that the velocity saturation effect may come into effect even under low drain voltage due to LER effect.
Publication Date
Winter January 14, 2011
Location
HongKong
DOI
10.1109/EDSSC.2010.5713678
Citation Information
Shaodi Wang, Lining Zhang and Jin He. "A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance" Electron Devices and Solid-State Circuits (EDSSC), 2010 IEEE International Conference of (2011)
Available at: http://works.bepress.com/shaodi-wang/8/