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Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs based on an Analytical Model
IETE Technical Review (2012)
  • Lining Zhang
  • Shaodi Wang, University of California, Los Angeles
  • Chenyue Ma
  • Jin He
  • Mansun Chan
Abstract
Gate underlap structure can be utilized to improve the immunity to short channel effects in MOSFET devices. In this work, gate underlap design scheme in cylindrical gate-all-around MOSFETs is explored based on an analytical model. This model takes into account the fringing field from gate electrode to underlap regions based on conformal mapping and a channel length transformation method. By solving Poisson equations in the underlap and channel regions and matching the boundary conditions, this model reproduces the channel potential profile in subthreshold operation region. Both symmetric and asymmetric underlap structures are covered. The developed model is verified extensively with TCAD simulations. A gate underlap design scheme is then provided based on this analytical model.
Keywords
  • Conformal mapping,
  • Gate-all-around MOSFET,
  • Gate underlap,
  • Short channel effects,
  • TCAD simulations
Publication Date
2012
DOI
10.4103/0256-4602.93125
Citation Information
Lining Zhang, Shaodi Wang, Chenyue Ma, Jin He, et al.. "Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs based on an Analytical Model" IETE Technical Review Vol. 29 Iss. 1 (2012) p. 29 - 35
Available at: http://works.bepress.com/shaodi-wang/5/