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Article
Comparative Evaluation of Spin-Transfer-Torque and Magnetoelectric Random Access Memory
IEEE Journal on Emerging and Selected Topics in Circuits and Systems (2016)
  • Shaodi Wang, University of California, Los Angeles
  • Hochul Lee
  • Farbod Ebrahimi
  • Pedram Khalili
  • Kang L. Wang, University of California, Los Angeles
  • Puneet Gupta
Abstract
Spin-transfer torque random access memory (STT-RAM), as a promising nonvolatile memory technology, faces challenges of high write energy and low density. The recently developed magnetoelectric random access memory (MeRAM) enables the possibility of overcoming these challenges by the use of voltage-controlled magnetic anisotropy (VCMA) effect and achieves high density, fast speed, and low energy simultaneously. As both STT-RAM and MeRAM suffer from the reliability problem of write errors, we implement a fast Landau-Lifshitz-Gilbert equation-based simulator to capture their write error rate (WER) under process and temperature variation. We utilize a multi-write peripheral circuit to minimize WER and design reliable STT-RAM and MeRAM. With the same acceptable WER, MeRAM shows advantages of 83% faster write speed, 67.4% less write energy, 138% faster read speed, and 28.2% less read energy compared with STT-RAM. Benefiting from the VCMA effect, MeRAM also achieves twice the density of STT-RAM with a 32 nm technology node, and this density difference is expected to increase with technology scaling down.
Keywords
  • Switches,
  • Magnetic tunneling,
  • Random access memory,
  • Magnetization,
  • Mathematical model,
  • Perpendicular magnetic anisotropy
Publication Date
Spring April 6, 2016
DOI
10.1109/JETCAS.2016.2547681
Citation Information
Shaodi Wang, Hochul Lee, Farbod Ebrahimi, Pedram Khalili, et al.. "Comparative Evaluation of Spin-Transfer-Torque and Magnetoelectric Random Access Memory" IEEE Journal on Emerging and Selected Topics in Circuits and Systems Vol. 6 Iss. 2 (2016) p. 134 - 145 ISSN: 2156-3365
Available at: http://works.bepress.com/shaodi-wang/4/