Copper Thin-Film Dissolution/Precipitation Kinetics in Organic HF Containing Cleaning SolutionJournal of The Electrochemical Society
- Mass spectrometry,
- Surface chemistry
AbstractThe corrosion behavior of electrochemically deposited copper thin films in deaerated and non-deaerated commercial cleaning solution containing HF has been investigated. Thin-film copper dissolution and reaction kinetics were investigated by monitoring Cu2+ , employing inductively coupled plasma–mass spectroscopy, and the oxidation states of copper on Si wafer surface, employing X-ray photoelectron spectroscopy. It was determined that the reaction kinetics is first order with respect to both HF and oxygen concentrations. A kinetic scheme involving reduction of oxygen and oxidation of Cu0 and Cu1+ is proposed, which is consistent with the experimentally determined reaction kinetic orders and the observed deposition of undesired copper residues on semiconductor wafers during the cleaning process.
Citation InformationNabil G. Mistkawi, Makarem A. Hussein, Malgorzata Ziomek-Moroz, and Shankar B. Rananavare, “Copper Thin-Film Dissolution/Precipitation Kinetics in Organic HF Containing Cleaning Solution,” J. Electrochem. Soc., 157(8), 801-805 (2010).