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Copper Thin-Film Dissolution/Precipitation Kinetics in Organic HF Containing Cleaning Solution
Journal of The Electrochemical Society
  • Nabil George Mistkawi, Portland State University
  • Makarem A. Hussein
  • Malgorzata Ziomek-Moroz, U.S. Department of Energy
  • Shankar B. Rananavare, Portland State University
Document Type
Publication Date
  • Mass spectrometry,
  • Electroforming,
  • Surface chemistry
The corrosion behavior of electrochemically deposited copper thin films in deaerated and non-deaerated commercial cleaning solution containing HF has been investigated. Thin-film copper dissolution and reaction kinetics were investigated by monitoring Cu2+ , employing inductively coupled plasma–mass spectroscopy, and the oxidation states of copper on Si wafer surface, employing X-ray photoelectron spectroscopy. It was determined that the reaction kinetics is first order with respect to both HF and oxygen concentrations. A kinetic scheme involving reduction of oxygen and oxidation of Cu0 and Cu1+ is proposed, which is consistent with the experimentally determined reaction kinetic orders and the observed deposition of undesired copper residues on semiconductor wafers during the cleaning process.

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Nabil G. Mistkawi, Makarem A. Hussein, Malgorzata Ziomek-Moroz, and Shankar B. Rananavare, “Copper Thin-Film Dissolution/Precipitation Kinetics in Organic HF Containing Cleaning Solution,” J. Electrochem. Soc., 157(8), 801-805 (2010).