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Article
Copper Thin-Film Dissolution/Precipitation Kinetics in Organic HF Containing Cleaning Solution
Journal of The Electrochemical Society
  • Nabil George Mistkawi, Portland State University
  • Makarem A. Hussein
  • Malgorzata Ziomek-Moroz, U.S. Department of Energy
  • Shankar B. Rananavare, Portland State University
Document Type
Article
Publication Date
1-1-2010
Subjects
  • Mass spectrometry,
  • Electroforming,
  • Surface chemistry
Disciplines
Abstract
The corrosion behavior of electrochemically deposited copper thin films in deaerated and non-deaerated commercial cleaning solution containing HF has been investigated. Thin-film copper dissolution and reaction kinetics were investigated by monitoring Cu2+ , employing inductively coupled plasma–mass spectroscopy, and the oxidation states of copper on Si wafer surface, employing X-ray photoelectron spectroscopy. It was determined that the reaction kinetics is first order with respect to both HF and oxygen concentrations. A kinetic scheme involving reduction of oxygen and oxidation of Cu0 and Cu1+ is proposed, which is consistent with the experimentally determined reaction kinetic orders and the observed deposition of undesired copper residues on semiconductor wafers during the cleaning process.
Description

This is the publisher's final PDF. © The Electrochemical Society, Inc. 2010. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published here: http://jes.ecsdl.org/content/157/8/H801.abstract

DOI
10.1149/1.3446816
Persistent Identifier
http://archives.pdx.edu/ds/psu/11954
Citation Information
Nabil G. Mistkawi, Makarem A. Hussein, Malgorzata Ziomek-Moroz, and Shankar B. Rananavare, “Copper Thin-Film Dissolution/Precipitation Kinetics in Organic HF Containing Cleaning Solution,” J. Electrochem. Soc., 157(8), 801-805 (2010).