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Article
Electronic structure calculations of substitutional and interstitial hydrogen in Nb
Solid State Communications
  • Pradeep Khowash, Michigan Technological University
  • Gowtham S, Michigan Technological University
  • Ravindra Pandey, Michigan Technological University
Document Type
Article
Publication Date
2-1-2012
Disciplines
Abstract

We report the results of a theoretical study on the effects of substitutional and interstitial hydrogen atoms in niobium. We confirm that any contaminated hydrogen will occupy the interstitial site over the substitutional site in niobium. For interstitial hydrogens, the lattice deformation increases with the percentage content of hydrogen, though it is negligible at low concentrations. Substitutional hydrogens are found to prefer off-center sites in the host lattice.

Publisher's Statement

© 2012 Elsevier Ltd. Publisher's version of record: http://dx.doi.org/10.1016/j.ssc.2012.01.042

Citation Information
Pradeep Khowash, Gowtham S and Ravindra Pandey. "Electronic structure calculations of substitutional and interstitial hydrogen in Nb" Solid State Communications Vol. 152 Iss. 9 (2012) p. 788 - 790
Available at: http://works.bepress.com/sgowtham/21/