Skip to main content
Article
Microstructure of vanadium-based contacts on n-type GaN
Journal of Physics D: Applied Physics (2012)
  • S. Pookpanratana
  • Sean R Mulcahy
  • R. France
  • R. Félix
  • R. Wilks
  • L. Weinhardt
  • T. Hofmann
  • L. Tati Bismaths
  • F. Kronast
  • T. D. Moustakas
  • M. Bär
  • C. Heske
Abstract
Atomic force microscopy, wavelength-dispersive x-ray spectroscopy and photoemission electron microscopy were used to study the contact formation of Au/V/Al/V-based contacts on n-type GaN. After a rapid thermal annealing contact formation step, we find that the surface is composed of dendritic structures. The dendrites are Au-rich, while the voids between the branches of the dendrites are V-rich, and cracks in the voids are Ga-rich. A detailed model of the chemical structure and morphology of V-based contacts on n-GaN is given and discussed in view of the ohmic-like behaviour of such contacts.
Keywords
  • Vanadium-based contacts,
  • n-type GaN
Disciplines
Publication Date
February, 2012
DOI
https://doi.org/10.1088/0022-3727/45/10/105401
Publisher Statement
Copyright 2012 IOP Publishing
Citation Information
S Pookpanratana et al 2012 J. Phys. D: Appl. Phys. 45 105401