Skip to main content
profile image
Selected Works of Santosh KC
Article
Organic–inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)
Journal of Materials Chemistry C (2016)
  • Jie Huang, University of Texas at Dallas
  • Hengji Zhang, University of Texas at Dallas
  • Antonio Lucero, University of Texas at Dallas
  • Lanxia Cheng, University of Texas at Dallas
  • Santosh KC, University of Texas at Dallas
  • Jian Wang, University of Texas at Dallas
  • Julia Hsu, University of Texas at Dallas
  • Kyeongjae Cho, The University of Texas at Dallas
  • Jiyoung Kim, University of Texas at Dallas
Link Find in your library
Abstract
Molecular-atomic layer deposition (MALD) is employed to fabricate hydroquinone (HQ)/diethyl zinc (DEZ) organic–inorganic hybrid semiconductor thin films with accurate thickness control, sharp interfaces, and low deposition temperature. Self-limiting growth is observed for both HQ and DEZ precursors. The growth rate remains constant at approximately 2.8 Å per cycle at 150 °C. The hybrid materials exhibit n-type semiconducting behavior with a field effect mobility of approximately 5.7 cm2 V−1 s−1 and an on/off ratio of over 103 following post annealing at 200 °C in nitrogen. The resulting films are characterized using ellipsometry, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), UV-Vis spectroscopy, transistor behavior, and Hall-effect measurements. Density functional theory (DFT) and many-body perturbation theory within the GW approximation are also performed to assist the explanation and understanding of the experimental results. This research offers n-channel materials as valuable candidates for efficient organic CMOS devices.
Disciplines
Publication Date
February 22, 2016
DOI
10.1039/C5TC03714J
Citation Information
Jie Huang, Hengji Zhang, Antonio Lucero, Lanxia Cheng, et al.. "Organic–inorganic hybrid semiconductor thin films deposited using molecular-atomic layer deposition (MALD)" Journal of Materials Chemistry C Vol. 4 Iss. 12 (2016) p. 2382 - 2389 ISSN: 2050-7526
Available at: http://works.bepress.com/santosh-kc/70/