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Selected Works of Santosh KC
Article
Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors
Scientific Reports (2016)
  • Junga Ryou, Korea Research Institute of Standards and Science
  • Yong-Sung Kim, University of Science and Technology
  • Santosh KC, University of Texas at Dallas
  • Kyeongjae Cho, The University of Texas at Dallas
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Abstract
Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed.
Disciplines
Publication Date
July 5, 2016
DOI
10.1038/srep29184
Publisher Statement
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This article was published in Scientific Reports, volume 6, 2016, and can also be found online here.
Copyright © 2016, The Authors
Citation Information
Junga Ryou, Yong-Sung Kim, Santosh KC and Kyeongjae Cho. "Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors" Scientific Reports Vol. 6 (2016)
Available at: http://works.bepress.com/santosh-kc/7/
Creative Commons license
Creative Commons License
This work is licensed under a Creative Commons CC_BY International License.