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Selected Works of Santosh KC
Article
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
Applied Physics Letters (2014)
  • Angelica Azcatl, University of Texas at Dallas
  • Stephen McDonnell, University of Texas at Dallas
  • Santosh KC, University of Texas at Dallas
  • Xin Peng, University of Texas at Dallas
  • Hong Dong, University of Texas at Dallas
  • Xiaoye Qin, University of Texas at Dallas
  • Rafik Addou, The University of Texas at Dallas
  • Greg I. Mordi, University of Texas at Dallas
  • Ning Lu, University of Texas at Dallas
  • Jiyoung Kim, University of Texas at Dallas
  • Moon J. Kim, University of Texas at Dallas
  • Kyeongjae Cho, The University of Texas at Dallas
  • Robert M. Wallace, University of Texas at Dallas
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Abstract
The effect of room temperature ultraviolet-ozone (UV-O3) exposure of MoS2 on the uniformity of subsequent atomic layer deposition of Al2O3 is investigated. It is found that a UV-O3 pre-treatment removes adsorbed carbon contamination from the MoS2 surface and also functionalizes the MoS2 surface through the formation of a weak sulfur-oxygen bond without any evidence of molybdenum-sulfur bond disruption. This is supported by first principles density functional theory calculations which show that oxygen bonded to a surface sulfur atom while the sulfur is simultaneously back-bonded to three molybdenum atoms is a thermodynamically favorable configuration. The adsorbed oxygen increases the reactivity of MoS2 surface and provides nucleation sites for atomic layer deposition of Al2O3. The enhanced nucleation is found to be dependent on the thin film deposition temperature.
Disciplines
Publication Date
March 19, 2014
DOI
10.1063/1.4869149
Publisher Statement
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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letter, volume 104, 2014, and may be found at https://doi.org/10.1063/1.4869149
© 2014, AIP Publishing LLC.
Citation Information
Angelica Azcatl, Stephen McDonnell, Santosh KC, Xin Peng, et al.. "MoS2 functionalization for ultra-thin atomic layer deposited dielectrics" Applied Physics Letters Vol. 104 (2014) ISSN: 0003-6951
Available at: http://works.bepress.com/santosh-kc/30/