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Selected Works of Santosh KC
Article
HfO2 on UV–O3 exposed transition metal dichalcogenides: interfacial reactions study
2D Materials (2015)
  • Angelica Azcatl, University of Texas at Dallas
  • Santosh KC, University of Texas at Dallas
  • Xin Peng, University of Texas at Dallas
  • Ning Lu, University of Texas at Dallas
  • Stephen McDonnell, University of Texas at Dallas
  • Xiaoye Qin, University of Texas at Dallas
  • Francis de Dios, University of Texas at Dallas
  • Rafik Addou, The University of Texas at Dallas
  • Jiyoung Kim, University of Texas at Dallas
  • Moon J. Kim, University of Texas at Dallas
  • Kyeongjae Cho, The University of Texas at Dallas
  • Robert M. Wallace, University of Texas at Dallas
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Abstract
The surface chemistry of MoS2, WSe2 and MoSe2 upon ultraviolet (UV)–O3 exposure was studied in situ by x-ray photoelectron spectroscopy (XPS). Differences in reactivity of these transition metal dichalcogenides (TMDs) towards oxidation during UV–O3 were observed and correlated with density functional theory calculations. Also, sequential HfO2 depositions were performed by atomic layer deposition (ALD) while the interfacial reactions were monitored by XPS. It is found that the surface oxides generated on MoSe2 and WSe2 during UV–O3 exposure were reduced by the ALD process ('self-cleaning effect'). The effectiveness of the oxide reduction on these TMDs is discussed and correlated with the HfO2 film uniformity.
Disciplines
Publication Date
January 13, 2015
DOI
10.1088/2053-1583/2/1/014004
Publisher Statement
SJSU users: Use the following link to login and access the article via SJSU databases.
Citation Information
Angelica Azcatl, Santosh KC, Xin Peng, Ning Lu, et al.. "HfO2 on UV–O3 exposed transition metal dichalcogenides: interfacial reactions study" 2D Materials Vol. 2 Iss. 1 (2015)
Available at: http://works.bepress.com/santosh-kc/23/