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Article
Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2
Advanced Functional Materials (2017)
  • Santosh KC, San Jose State University
Publication Date
2017
Citation Information
Santosh KC. "Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe2" Advanced Functional Materials Vol. 27 (2017)
Available at: http://works.bepress.com/santosh-kc/15/