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Selected Works of Sandip Das
Article
Radiation Detectors Based on 4H Semi-Insulating Silicon Carbide
Proceedings of SPIE
  • K. C. Mandal, University of South Carolina - Columbia
  • Ramesh Madhu Krishna, University of South Carolina
  • P. G. Muzykov, University of South Carolina - Columbia
  • Zegilor Laney, University of South Carolina - Columbia
  • Sandip Das, University of South Carolina - Columbia
  • Tangali S. Sudarshan, University of South Carolina - Columbia
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Publication Date
8-1-2010
Document Type
Article
Subject Area(s)
Engineering, Optics, Spectroscopy
Disciplines
Rights

© Proceedings of SPIE 2010, Society of Photo-optical Instrumentation Engineers

Mandal, K. C., Krishna, R., Muzykov, P. G., Laney, Z., Das, S., & Sudarshan, T. S. (1 August 2010). Radiation detectors based on 4H semi-insulating silicon carbide. Proceedings of SPIE, 7805, 78050U-1-8.

http://dx.doi.org/10.1117/12.863572

Citation Information
K. C. Mandal, Ramesh Madhu Krishna, P. G. Muzykov, Zegilor Laney, et al.. "Radiation Detectors Based on 4H Semi-Insulating Silicon Carbide" Proceedings of SPIE Vol. 7805 (2010) p. 78050U-1 - 78050U-8
Available at: http://works.bepress.com/sandip-das/57/