Skip to main content
profile image
Selected Works of Sandip Das
Article
Characterization of 4H Semi-Insulating Silicon Carbide for Radiation Detector Applications
Nuclear Science Symposium and Medical Imaging Conference
  • K. C. Mandal, University of South Carolina - Columbia
  • P. G. Muzykov
  • Ramesh Madhu Krishna, University of South Carolina
  • Sandip Das, University of South Carolina - Columbia
  • Tangali S. Sudarshan, University of South Carolina - Columbia
Link Find in your library
Publication Date
1-1-2010
Document Type
Article
Subject Area(s)
Electrical Engineering, Nuclear Science
Disciplines
Rights

© Nuclear Science Symposium Conference Record 2010, IEEE

Mandal, K. C., Muzykov, P. G., Krishna, R. M., Das, S., & Sudarshan, T. S. (2010). Characterization of 4H semi-insulating silicon carbide for radiation detector applications. Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE, 3725-3731.

http://dx.doi.org/10.1109/NSSMIC.2010.5874508

Citation Information
K. C. Mandal, P. G. Muzykov, Ramesh Madhu Krishna, Sandip Das, et al.. "Characterization of 4H Semi-Insulating Silicon Carbide for Radiation Detector Applications" Nuclear Science Symposium and Medical Imaging Conference (2010) p. 3725 - 3731
Available at: http://works.bepress.com/sandip-das/37/