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Selected Works of Sandip Das
Article
Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors
IEEE Transactions on Nuclear Science
  • K. C. Mandal, University of South Carolina - Columbia
  • Ramesh Madhu Krishna, University of South Carolina
  • P. G. Muzykov, University of South Carolina - Columbia
  • Sandip Das, University of South Carolina - Columbia
  • Tangali S. Sudarshan, University of South Carolina - Columbia
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Publication Date
6-9-2011
Document Type
Article
Subject Area(s)
Nuclear Science, Electrical Engineering
Disciplines
Rights

© IEEE Transactions on Nuclear Science 2011, Institute of Electrical and Electronics Engineers

Mandal, K. C., Krishna, R. M., Muzykov, P. G., Das, S., & Sudarshan, T. S. (9 June 2011). Characterization of semi-insulating 4H silicon carbide for radiation detectors. IEEE Transactions on Nuclear Science, 58(4), 1992-1999.

http://dx.doi.org/10.1109/TNS.2011.2152857

Citation Information
K. C. Mandal, Ramesh Madhu Krishna, P. G. Muzykov, Sandip Das, et al.. "Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors" IEEE Transactions on Nuclear Science Vol. 58 Iss. 4 (2011) p. 1992 - 1999
Available at: http://works.bepress.com/sandip-das/36/