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Presentation
Applications of Optical Emission Spectroscopy to Semiconductor Processing
Proceedings of the 1984 Materials Research Society Fall Meeting: Symposium F
  • Richard N. Savage, SC Technology, Inc., Milpitas, CA
  • John G. Shabushnig, PT Analytical, Inc., San Jose, CA
  • Paul R. Demko, PT Analytical, Inc., San Jose, CA
Publication Date
1-1-1985
Abstract

Optical emission spectroscopy (OES) has proven to be a valuable tool in the developmrent and production of state-of-the-art semiconductor devices. Application to the plasma etching of a variety of materials necessary for integrated circuit fabrication is discussed, with particular emphasis placed on etch endpoint analysis. The utility of OES techniques in monitoring photolithographic processes is also presented.

Publisher statement
The definitive version is available at http://www.mrs.org/s_mrs/sec.asp?CID=11820&DID=204472.

Citation Information
Richard N. Savage, John G. Shabushnig and Paul R. Demko. "Applications of Optical Emission Spectroscopy to Semiconductor Processing" Proceedings of the 1984 Materials Research Society Fall Meeting: Symposium F Vol. 38: Plasma Synthesis and Etching of Electronic Materials (1985) p. 77 - 84
Available at: http://works.bepress.com/rsavage/22/