Article
Nanostructured Semiconductor Heterojunctions from Quantum Dot Layers
Applied Physics Letters
Sponsor
This research was supported by ONAMI, the Oregon Nano- and Microtechnologies Institute and DOE-BES under grant number DE-FG02–07ER46406.
Document Type
Article
Publication Date
8-1-2009
Subjects
- Nanostructured materials,
- Quantum electronics,
- Semiconductor doping
Disciplines
Abstract
We report the deposition of conformal thin layers of 10?50 nm thickness from II-VI quantum dot suspensions on ZnO nanowire substrates. Smooth polycrystalline films of high electronic quality can be obtained from CdSe quantum dots after annealing at moderate temperatures. The electronic properties are adequate for detector and solar cell applications. The growth and annealing temperatures permit deposition on light-weight and flexible substrates. Some elemental diffusion of Se across the CdSe/ZnO interface occurs in the film formation. A comparison with CdS/ZnO junctions indicates that the low Se diffusion rates are essential for efficient charge transfer.
Rights
© 2009 American Institute of Physics
Locate the Document
DOI
10.1063/1.3193531
Persistent Identifier
http://archives.pdx.edu/ds/psu/7253
Citation Information
Könenkamp, R. R., Nadarajah, A. A., & Word, R. C. (2009). Nanostructured semiconductor heterojunctions from quantum dot layers. Applied Physics Letters, 95(5), 053103
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 95, 053103 (2009) and may be found at https://doi.org/10.1063/1.3193531