Toward surround gates on vertical single-walled carbon nanotube devicesBirck and NCN Publications
AbstractThe one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG). Using vertical SWCNTs templated in porous anodic alumina, SGs are formed using top-down processes for the dielectric/metal depositions and definition of the channel length. Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects. The process demonstrated here for forming SGs on vertical SWCNTs is amenable for large-scale fabrication of multinanotube FETs.
- FIELD-EFFECT TRANSISTOR; HIGH-PERFORMANCE ELECTRONICS; POROUS ALUMINA; ARRAYS; LITHOGRAPHY; FABRICATION; TEMPLATES; CIRCUITS; CONTACT; SILICON
Date of this Version3-30-2009
Citation InformationAaron D Franklin, Robert A Sayer, Timothy D Sands, Timothy Fisher, et al.. "Toward surround gates on vertical single-walled carbon nanotube devices" (2009)
Available at: http://works.bepress.com/robert_sayer/3/