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Resistivity recovery in Gd5Si2.09Ge1.91 by annealing
Journal of Applied Physics (2010)
  • Ravi L. Hadimani, Cardiff University
  • David C. Jiles, Iowa State University
Irreversible change in resistivity occurs in Gd5(SixGe1−x)4 (with 0.41
  • Electrical resistivity,
  • Phase transitions,
  • Germanium,
  • Dislocations,
  • Polycrystals
Publication Date
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Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 107 (2010): 09C501 and may be found at
Citation Information
Ravi L. Hadimani and David C. Jiles. "Resistivity recovery in Gd5Si2.09Ge1.91 by annealing" Journal of Applied Physics Vol. 107 Iss. 9 (2010)
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