Article
Influence of Mn Concentration on Magnetic Topological Insulator MnxBi2−xTe3 Thin-Film Hall-Effect Sensor
IEEE Transactions on Magnetics
Document Type
Article
Disciplines
Publication Version
Accepted Manuscript
Publication Date
11-1-2015
DOI
10.1109/TMAG.2015.2444378
Abstract
Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almost eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.
Rights
Copyright 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Copyright Owner
IEEE
Copyright Date
2015
Language
en
File Format
application/pdf
Citation Information
Ravi L. Hadimani, S. Gupta, S. M. Harstad, Vitalij K. Pecharsky, et al.. "Influence of Mn Concentration on Magnetic Topological Insulator MnxBi2−xTe3 Thin-Film Hall-Effect Sensor" IEEE Transactions on Magnetics Vol. 51 Iss. 11 (2015) p. 4004704 Available at: http://works.bepress.com/rlhadimani/27/
This is a manuscript of an article published as Ni, Y., Z. Zhang, I. C. Nlebedim, R. L. Hadimani, and D. C. Jiles. "Influence of Mn Concentration on Magnetic Topological Insulator Mn x Bi 2− x Te 3 Thin-Film Hall-Effect Sensor." IEEE Transactions on Magnetics 51, no. 11 (2015): 1-4. DOI: 10.1109/TMAG.2015.2444378. Posted with permission.