Article
Wide-Bandgap Semiconductor Technology: Its Impact on the Electrification of the Transportation Industry
IEEE Electrification Magazine
Abstract
The efficiency of any electric vehicle (EV) is limited by the efficiency of its power electronic motor drive. Currently, EVs use conventional silicon (Si) insulated-gate bipolar transistor (IGBT) or Si metal-oxide-semiconductor field-effect transistor (MOSFET) technologies. Si technology prevents traction motor drives from exceeding the low switching frequencies (tens of kilohertz) due to excessive switching losses. This is important as the size of passive components (and thus cost) is inversely related to the switching frequency.
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
- Efficiency,
- Electric Drives,
- Electric Motors,
- Electron Beam Lithography,
- Field Effect Transistors,
- Insulated Gate Bipolar Transistors (IGBT),
- Metals,
- MOS Devices,
- MOSFET Devices,
- Oxide Semiconductors,
- Power MOSFET,
- Power Transistors,
- Semiconductor Device Manufacture,
- Silicon,
- Switching Frequency,
- Traction Motors,
- Transistors,
- Wide Band gap Semiconductors,
- Electronic Motors,
- Low Switching Frequency,
- Si Technology,
- Switching Loss,
- Traction Motor Drives,
- Transportation Industry,
- Semiconducting Silicon
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2013 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
12-1-2013
Publication Date
01 Dec 2013
Disciplines
Citation Information
Pourya Shamsi, Matthew McDonough and Babak Fahimi. "Wide-Bandgap Semiconductor Technology: Its Impact on the Electrification of the Transportation Industry" IEEE Electrification Magazine Vol. 1 Iss. 2 (2013) p. 59 - 63 ISSN: 2325-5897 Available at: http://works.bepress.com/pourya-shamsi/62/