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Article
The Ion Capturing Effect of 5 Degrees Siox Alignment Films in Liquid Crystal Devices
Journal of Applied Physics
  • Yi Huang, Kent State University - Kent Campus
  • Philip J. Bos, Kent State University - Kent Campus
  • Achintya Bhowmik
Publication Date
9-17-2010
Document Type
Article
DOI
10.1063/1.3481088
Keywords
  • complex dielectric-constant,
  • orientation,
  • generation,
  • transport,
  • surface,
  • cells,
  • layers
Disciplines
Abstract
We show that SiOx, deposited at 5 degrees to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5 degrees SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/mu m(2). These types of materials are useful for new types of very low power liquid crystal devices such as e-books.
Comments

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 108, 064502 (2010) and may be found at http://dx.doi.org/10.1063/1.3481088

Citation Information
Yi Huang, Philip J. Bos and Achintya Bhowmik. "The Ion Capturing Effect of 5 Degrees Siox Alignment Films in Liquid Crystal Devices" Journal of Applied Physics Vol. 108 Iss. 6 (2010)
Available at: http://works.bepress.com/philip_bos/39/