Article
In Situ Measurements of Interface States at Silicon Surfaces in Fluoride Solutions
Physical Review Letters
(1996)
Abstract
The energetics and kinetics of processes involving interface states at silicon (111) surfaces in aqueous fluoride solutions were determined using in situ impedance spectroscopy. In the dark, we observe electrically active surface states with densities in the range 2×1010 to 1×1012cm−2 dependent on the surface chemistry. The surface states are physically the same, independent of pH, with a capture cross section of 1×10−16cm2. Measurements under illumination show that recombination occurs at different interface states than those observed in the dark.
Disciplines
Publication Date
1996
DOI
https://doi.org/10.1103/PhysRevLett.76.1521
Citation Information
Peter M. Hoffmann, Gerko Oskam and Peter C. Searson. "In Situ Measurements of Interface States at Silicon Surfaces in Fluoride Solutions" Physical Review Letters (1996) Available at: http://works.bepress.com/peter_m_hoffmann/40/