Article
Electrochemical Etching of n-Type Silicon in Fluoride Solutions
Journal of the Electrochemical Society
(2000)
Abstract
The chemistry of silicon surfaces in aqueous fluoride solutions is complex and exhibits many unique features. The etch rate of the hydrogen‐passivated surface passes through a maximum at about pH 7 and is slow at low and high pH. The density of etching intermediates exhibits a sigmoidal behavior of low density in acidic and high density in basic solutions. We show that the pH dependence of both the etch rate and the density of intermediates can be explained by taking into account the fluoride ion concentration, and the concentrations of molecular HF, the dimer , , as well as and .
Disciplines
Publication Date
2000
DOI
https://doi.org/10.1149/1.1393638
Citation Information
Peter M. Hoffmann, Inge E. Vermeir and Peter C. Searson. "Electrochemical Etching of n-Type Silicon in Fluoride Solutions" Journal of the Electrochemical Society (2000) Available at: http://works.bepress.com/peter_m_hoffmann/35/