Article
Structural and Optical Properties of InAs/AlAsSb Quantum Dots with GaAs(Sb) Cladding Layers
Applied Physics Letters
(2012)
Abstract
We investigate the effect of GaAs1−xSbxcladding layer composition on the growth and properties of InAsself-assembledquantum dots surrounded by AlAs0.56Sb0.44 barriers. Lowering Sb-content in the GaAs1−xSbx improves the morphology of the InAs quantum dots and reduces cladding layer alloy fluctuations. The result is a dramatic increase in photoluminescence intensity from the InAs quantum dots, with a peak at 0.87 eV. The emission energy exhibits a cube root dependence on excitation power, consistent with the type-II band alignment of the quantum dots. The characteristics of this quantum dot system show promise for applications such as intermediate band solar cells.
Keywords
- III-V semiconductors,
- cladding,
- quantum dots,
- optical properties,
- self assembly
Disciplines
Publication Date
June 11, 2012
Publisher Statement
This document was originally published by AIP Publishing in Applied Physics Letters. Copyright restrictions may apply. doi: 10.1063/1.4729419
Citation Information
Paul J. Simmonds, Ramesh Babu Laghumavarapu, Meng Sun, Andrew Lin, et al.. "Structural and Optical Properties of InAs/AlAsSb Quantum Dots with GaAs(Sb) Cladding Layers" Applied Physics Letters Vol. 100 Iss. 24 (2012) Available at: http://works.bepress.com/paul_simmonds/18/