Article
Effects of GaAs(Sb) Cladding Layers on InAs/AlAsSb Quantum Dots
Applied Physics Letters
(2013)
Abstract
The structural and optical properties of InAs self-assembled quantum dots buried in AlAs0.56Sb0.44 barriers can be controlled using GaAs1−xSbx cladding layers. These cladding layers allow us to manage the amount of Sb immediately underneath and above the InAs quantum dots. The optimal cladding scheme has a GaAs layer beneath the InAs, and a GaAs0.95Sb0.05 layer above. This scheme results in improved dot morphology and significantly increased photoluminescence (PL) intensity. Both power-dependent and time-resolved photoluminescence confirm that the quantum dots have type-II band alignment. Enhanced carrier lifetimes in this quantum dot system show great potential for application in intermediate band solar cells.
Keywords
- III-V semiconductors,
- cladding,
- photoluminescense,
- quantum dots,
- materials properties
Disciplines
Publication Date
January 14, 2013
Publisher Statement
For complete list of authors, please see article.
This document was originally published by AIP Publishing in Applied Physics Letters. Copyright restrictions may apply. doi: 10.1063/1.4776221
Citation Information
Paul J Simmonds. "Effects of GaAs(Sb) Cladding Layers on InAs/AlAsSb Quantum Dots" Applied Physics Letters Vol. 102 Iss. 2 (2013) Available at: http://works.bepress.com/paul_simmonds/16/