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Article
Normal-State Electronic Properties of Sn0.12Eu1.08Mo6S8 at Low Temperature and High Pressure
Physica B&C
  • Paul D. Hambourger, Cleveland State University
  • C. Y. Huang, Los Alamos National Laboratory
  • H. L. Luo, University of California, San Diego
  • B. Segall, Case Western Reserve University
Document Type
Article
Publication Date
1-1-1981
Disciplines
Abstract
The Hall coefficient and resistivity of Sn0.12Eu1.08Mo6S8 have been measured over the range 1.5100 K. A band model is proposed which is qualitatively consistent with the data.
DOI
10.1016/0378-4363(81)90934-7
Citation Information
Hambourger, P.D., et al. 1981. Normal-state electronic properties of Sn0.12Eu1.08Mo6S8 at low temperature and high pressure. Physica B+C 108, no. 1-3:1269-1270.