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Article
Electronic Conduction Process in 1T-TaS2
Physica B+C
  • Paul D. Hambourger, Cleveland State University
  • F. J. Di Salvo, Bell Laboratories
Document Type
Article
Publication Date
1-1-1980
Disciplines
Abstract
The electrical resistivity parallel to the layers of Se-doped 1T-TaS2 has been measured over the range 1.3 < T < 240 K. Results support the existence of disorder-induced carrier localization in this material. Anisotropy studies in pure samples show that θc/θa ~ 500, where θc and θa are the resistivities normal and parallel to the layers, respectively, suggesting that the conduction is 2-dimensional.
DOI
10.1016/0378-4363(80)90227-2
Citation Information
Hambourger, P.D. and F.J. di Salvo. 1980. Electronic conduction process in 1T-TaS2. Physica B+C 99, no. 1-4:173-176.