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Article
Low-temperature transport properties of NdBiPt
Physical Review B
  • Donald T. Morelli, General Motors
  • Paul C. Canfield, Iowa State University
  • Phoebus Drymiotis, Iowa State University
Document Type
Article
Publication Date
5-15-1995
DOI
10.1103/PhysRevB.53.12896
Abstract

NdBiPt is a member of a new class of ternary intermetallic semiconductors and semimetals. These materials are covalently bonded crystals with band gaps expected to be in the range of 0–1 eV. Longitudinal resistivity, Hall resistivity, and thermoelectric power measurements reveal that in NdBiPt the ‘‘gap’’ is an overlap that gives rise to a semimetallic behavior exhibiting high hole and electron mobilities.

Comments

This article is from Physical Review B 53 (1996): 12896, doi:10.1103/PhysRevB.53.12896. Posted with permission.

Copyright Owner
American Physical Society
Language
en
Date Available
2014-09-05
File Format
application/pdf
Citation Information
Donald T. Morelli, Paul C. Canfield and Phoebus Drymiotis. "Low-temperature transport properties of NdBiPt" Physical Review B Vol. 53 (1995) p. 12896 - 12901
Available at: http://works.bepress.com/paul_canfield/15/