Systematic measurements of temperature-dependent magnetization, resistivity, and angle-resolved photoemission spectroscopy (ARPES) at ambient pressure as well as resistivity under pressures up to 5.25 GPa were conducted on single crystals of CrAuTe4. Magnetization data suggest that magnetic moments are aligned antiferromagnetically along the crystallographic c axis below TN=255 K. ARPES measurements show band reconstruction due to the magnetic ordering. Magnetoresistance data show clear anisotropy, and, at high fields, quantum oscillations. The Néel temperature decreases monotonically under pressure, decreasing to TN=236 K at 5.22 GPa. The pressure dependencies of (i) TN, (ii) the residual resistivity ratio, and (iii) the size and power-law behavior of the low-temperature magnetoresistance all show anomalies near 2 GPa suggesting that there may be a phase transition (structural, magnetic, and/or electronic) induced by pressure. For pressures higher than 2 GPa a significantly different quantum oscillation frequency emerges, consistent with a pressure induced change in the electronic states.