Article
Self-diffusivity of liquid silicon measured by pulsed laser melting
Journal of Applied Physics
(1999)
Abstract
The silicon liquid self-diffusivity was determined by pulsed laser melting of 30Si ion implanted silicon-on-insulator thin films. Secondary ion mass spectrometry was employed to measure the 30Si+ concentration-depth profile before and after melting and solidification. Melt depth versus time and total melt duration were monitored by time-resolved lateral electrical conductance and optical reflectance measurements. One-dimensional diffusion simulations were utilized to match the final 30Si+ experimental concentration spatial profile given the initial concentration profile and the temporal melt-depth profile. The silicon liquid self-diffusivity at the melting point is (4.0±0.5)×10−4 cm2/s. Calculations of buoyancy and Marangoni convection indicate that convective contamination is unlikely.
Disciplines
Publication Date
September, 1999
DOI
10.1063/1.371354
Publisher Statement
© 1999 American Institute of Physics. Publisher's version of record: http://dx.doi.org/10.1063/1.371354
Citation Information
Paul G. Sanders and M. J. Aziz. "Self-diffusivity of liquid silicon measured by pulsed laser melting" Journal of Applied Physics Vol. 86 Iss. 8 (1999) ISSN: 0021-8979 Available at: http://works.bepress.com/paul-sanders/30/