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Article
Ambipolar behaviors of hydrogen-incorporated ZnO nanowires
The Journal of Physical Chemistry C
  • Abhishek Prasad, Michigan Technological University
  • Archana Pandey, Michigan Technological University
  • Vamsi Krishna Kunapuli, Michigan Technological University
  • Paul L. Bergstrom, Michigan Technological University
  • Yoke Khin Yap, Michigan Technological University
Document Type
Article
Publication Date
3-14-2012
Abstract

Ambipolar behaviors of zinc oxide nanowires (ZnO NWs) are obtained for the first time by controlled annealing in hydrogen ambient. Optimum annealing can create p-type acceptors into ZnO NWs while maintaining the n-type donors from the as-grown samples. We found that such optimum condition must be one that is more than sufficient to eliminate the green photoluminescence (PL) band of the as-grown ZnO NWs. All of these can be explained by an ab initio model of Zn vacancy-hydrogen complexes, which can served as the donor, acceptor, or green PL quencher depending on the number of hydrogen atoms involved.

Publisher's Statement

Copyright © 2012 American Chemical Society. Publisher's version of record: https://doi.org/10.1021/jp3003118

Citation Information
Abhishek Prasad, Archana Pandey, Vamsi Krishna Kunapuli, Paul L. Bergstrom, et al.. "Ambipolar behaviors of hydrogen-incorporated ZnO nanowires" The Journal of Physical Chemistry C Vol. 116 Iss. 14 (2012) p. 8210 - 8215
Available at: http://works.bepress.com/paul-bergstrom/14/