Presentation
Formation of Irregular Al Islands by Room-Temperature Deposition on NiAl(110)
Ames Laboratory Conference Papers, Posters, and Presentations
Document Type
Conference Proceeding
Disciplines
Conference
Symposium SS/TT/UU/VV – Advances in Spectroscopy and Imaging of Surfaces and Nanostructures
Publication Date
1-1-2011
DOI
10.1557/opl.2011.484
Geolocation
(40.65320759999999, -80.07949250000001)
Abstract
STM studies reveal that irregular non-equilibrium two-dimensional Al islands form during deposition of Al on NiAl(110) at 300 K. These structures reflect the multiple adsorption sites and diffusion paths available for Al adatoms on the binary alloy surface, as well as the details of inhibited edge diffusion and detachment-attachment kinetics of Al adatoms for numerous distinct step edge configurations. We attempt to capture these features by multi-site lattice-gas modeling incorporating DFT energetics for adatoms both at adsorption sites and transition states. This formulation enables description and elucidation of the observed island growth shapes.
Copyright Owner
Materials Research Society
Copyright Date
2011
Language
en
Citation Information
Dapeng Jing, Yong Han, Bariş Ünal, J W. Evans, et al.. "Formation of Irregular Al Islands by Room-Temperature Deposition on NiAl(110)" Warrendale, PA(2011) Available at: http://works.bepress.com/patricia_thiel/89/
This article is from Symposium SS/TT/UU/VV – Advances in Spectroscopy and Imaging of Surfaces and Nanostructures 1314 (2011): pp. 73—78, doi:10.1557/opl.2011.484