Skip to main content
Article
Initial stages of metal encapsulation during epitaxial growth studied by STM: Rh/Ag(100)
Physical Review B
  • S.-L. Chang, Iowa State University
  • J.-M. Wen, Iowa State University
  • Patricia A. Thiel, Iowa State University
  • S. Günther, Universität Ulm
  • J. A. Meyer, Universität Ulm
  • R. J. Behm, Universität Ulm
Document Type
Article
Disciplines
Publication Date
5-15-1996
DOI
10.1103/PhysRevB.53.13747
Abstract

We present results of a scanning tunneling microscope (STM) study of Rh/Ag(100) epitaxy, which shows how the surface rearranges toward the more stable encapsulated structure known to form at higher temperatures. At room temperature, Rh growth proceeds via two competing pathways: (i) thermally activated exchange with Ag surface atoms, which leads to increased coordination of the higher surface free-energy metal Rh by Ag atoms, and (ii) nucleation and growth of mixed Rh/Ag adislands. The Ag-Rh interaction also reduces the surface mobility of Ag, e.g., by local pinning of step edges, accompanied by complex step and surface erosion processes.

Comments

This article is from Physical Review B 53, no. 20 (1996): 13747–13752, doi:10.1103/PhysRevB.53.13747.

Copyright Owner
American Physical Society
Language
en
File Format
application/pdf
Citation Information
S.-L. Chang, J.-M. Wen, Patricia A. Thiel, S. Günther, et al.. "Initial stages of metal encapsulation during epitaxial growth studied by STM: Rh/Ag(100)" Physical Review B Vol. 53 Iss. 20 (1996) p. 13747 - 13752
Available at: http://works.bepress.com/patricia_thiel/80/