Presentation
Kinetic Monte Carlo Simulation of Epitaxial Thin Film Growth: Formation of Submonolayer Islands and Multilayer Mounds
Chemistry Conference Papers, Posters and Presentations
Document Type
Conference Proceeding
Disciplines
Conference
Perspectives on inorganic, organic, and biological crystal growth: from fundamentals to applications: Based on the lectures presented at the 13th International Summer School on Crystal Growth
Publication Date
8-1-2007
Geolocation
(40.6460622, -111.4979729)
Copyright Owner
American Institute of Physics
Copyright Date
2007
Language
en
Citation Information
James W. Evans, Patricia A. Thiel and Maozhi Li. "Kinetic Monte Carlo Simulation of Epitaxial Thin Film Growth: Formation of Submonolayer Islands and Multilayer Mounds" Park City, Utah(2007) Available at: http://works.bepress.com/patricia_thiel/66/
We consider homoepitaxy (or low‐misfit heteroepitaxy) via vapor deposition or MBE under UHV conditions. Thin film growth is initiated by nucleation and growth of 2D islands in the submonolayer regime. For atoms subsequently deposited on top of islands, a step edge barrier often inhibits downward transport and produces kinetic roughening during multilayer growth. Such unstable growth is characterized by the formation of 3D mounds (multilayer stacks of 2D islands). Kinetic Monte Carlo (KMC) simulation of suitable atomistic lattice‐gas models can address fundamental or general issues related to both submonolayer and multilayer film evolution, and can also provide a predictive tool for morphological evolution in specific systems. Examples of the successes of KMC modeling are provided for metal homoepitaxial film growth, specifically for contrasting behavior in the classic Ag/Ag(100) and Ag/Ag(111) systems.