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Article
Influence of strain in Ag on Al(111) and Al on Ag(100) thin film growth
Physical Review B
Document Type
Article
Disciplines
Publication Date
1-1-2003
DOI
10.1103/PhysRevB.67.155401
Abstract
We demonstrate the influence of interfacial strain on the growth modes of Ag films on Al(111), despite the small magnitude of the lattice misfit in this system. The strain is relieved by the formation of stacking fault domains bounded by Shockley partial dislocations. The growth mode and the step roughness appear to be strongly connected. Growth is three-dimensional (3D) as long as the steps are straight, but switches to 2D at higher coverage when the steps become rough. Anisotropic strain relaxation and straight steps seem to be related. We also report related observations for Al deposited on Ag(100).
Copyright Owner
American Physical Society
Copyright Date
2003
Language
en
File Format
application/pdf
Citation Information
V. Fournée, J. Ledieu, T. Cai and Patricia A. Thiel. "Influence of strain in Ag on Al(111) and Al on Ag(100) thin film growth" Physical Review B Vol. 67 Iss. 15 (2003) p. 155401 Available at: http://works.bepress.com/patricia_thiel/33/
This article is from Physical Review B 67, no. 15 (2003): 144501, doi:10.1103/PhysRevB.67.155401.