The Effect of Oxygen Partial Pressure on the Wetting of SiC, AlN, and Si₃N₄ by Si and a Method for Calculating the Surface Energies InvolvedSurfaces and Interfaces in Ceramic and Ceramic--Metal Systems, Materials Science Research
AbstractThe degree to which molten silicon wets a solid, and reacts chemically and physically with it, determines the solid's usefulness as a die or container material. It is the purpose of this work to show that the oxygen partial pressure in the environment is an important factor in determining the degree to which solids are wetted by liquid silicon. Of particular interest is the PO2 range below where SiO2 is formed. In a recent study1 the authors have demonstrated that the oxygen activity in this range is very significant in determining both the chemical and physical interaction and the contact angle between liquid silicon and some refractory solids. The PO2 dependence of the contact angle is then used to calculate the solid surface energies.
Department(s)Materials Science and Engineering
Document TypeArticle - Journal
Rights© 1981 Plenum Press, All rights reserved.
Citation InformationMichael W. Barsoum and P. D. Ownby. "The Effect of Oxygen Partial Pressure on the Wetting of SiC, AlN, and Si₃N₄ by Si and a Method for Calculating the Surface Energies Involved" Surfaces and Interfaces in Ceramic and Ceramic--Metal Systems, Materials Science Research Vol. 14 (1981) p. 457 - 466
Available at: http://works.bepress.com/p_ownby/188/