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Article
Electron Emitter Tips and Method
U.S. Patents
  • P. D. Ownby, Missouri University of Science and Technology
Abstract

Boron is deposited on the (110) plane facet at the center of a tungsten electron emitter tip by chemical vapor deposition of boron triiodide. The emission current density is greatest in the center of the emitting area (FIG. 2).

Department(s)
Materials Science and Engineering
Patent Number
US3500104A
Document Type
Patent
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1970 Battelle Development Corp, All rights reserved.
Publication Date
3-10-1970
Publication Date
10 Mar 1970
Citation Information
P. D. Ownby. "Electron Emitter Tips and Method" U.S. Patents (1970)
Available at: http://works.bepress.com/p_ownby/132/