For many quantum dot nanostructures, the experimental setup involves placement of gate potentials with sharp geometric features. As a result the area depleted of electrons, thus, the quantum dot region has a square (or rectangular) shape. The drawback of using a realistic confining potential originating from the given quantum dot configuration is that, generally, such potentials are complicated. Dependence of many properties on each coordinate rather than the overall distance from the center of the quantum dot is a major complication for various numerical methods. Obviously, a circularly symmetric confining potential would be more desirable from the perspective of numerical methods or simulations. In this work we consider the use of approximate circularly symmetric confining potentials for square patterned quantum dot nanostructures. We assess the quality of the approximation and discuss instances in which one can use the approximate simplified potential instead of the computationally unyielding exact one. © 2012, Advanced Engineering Solutions.