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Article
Gas permeabilities in thermally grown silicon dioxide films.
Materials Science and Engineering: B (1995)
  • Yong-Long Li
  • Neville G. Pinto, University of Louisville
  • H. Thurmon Henderson
  • Sun-Tak Hwang
  • Phu Nguyen
Abstract
The permeability characteristics of six gases, argon, helium, oxygen, nitrogen, carbon dioxide and hydrogen, in thermally grown silicon dioxide films have been evaluated. By studying the dependence of permeabilities on temperature, pressure and molecular weigth, it has been established that the controlling mechanism of transport is viscous flow through micropores. This implies, contrary to what is commonly assumed, that gas permeabilities in thermally grown silicon dioxide films decreases with an increase in temperature, and suggests that annealing temperatures should be low for favorable gas fluxes.
Keywords
  • Silicon oxide,
  • Diffusion,
  • Thin films,
  • Oxygen
Disciplines
Publication Date
June, 1995
DOI
10.1016/0921-5107(94)01175-3
Citation Information
Yong-Long Li, Neville G. Pinto, H. Thurmon Henderson, Sun-Tak Hwang, et al.. "Gas permeabilities in thermally grown silicon dioxide films." Materials Science and Engineering: B Vol. 32 Iss. 1-2 (1995) p. 63 - 68
Available at: http://works.bepress.com/neville-pinto/23/